Memory effect of metal-insulator-silicon capacitor with HfO2-Al2O3 multilayer and hafnium nitride gate

被引：16

作者：

Ding, Shi-Jin ^{[1
]}

Zhang, Min ^{[1
]}

Chen, Wei ^{[1
]}

Zhang, David Wei ^{[1
]}

Wang, Li-Kang ^{[1
]}

机构：

[1] Fudan Univ, State Key Lab ASIC & Syst, Sch Microelect, Shanghai 200433, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2007年 / 36卷 / 03期

基金：

中国国家自然科学基金;

关键词：

memory effect; atomic-layer-deposition; high permittivity; HfO2-Al2O3; multilayer;

D O I：

10.1007/s11664-006-0003-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-insulator-silicon capacitors have been fabricated using novel insulators of SiO2/HfO2-Al2O3-HfO2 (HAH)/Al2O3 and metallic HfN gate, exhibiting a program-erasable characteristic. The memory capacitor presents a large memory window of 2.4 V under +12 V program/-14 V erase for 10 ms, no erase saturation, and sufficient electron- and hole-trapping efficiencies such as an electron density of similar to 7 x 10(12) cm(-2) under 13 V program for 0.5 ms and a hole density of similar to 4 x 10(12) cm(-2) under -12 V erase for 0.5 ms. The observed properties are attributed to the introduction of high permittivity atomic-layer-deposited HAH/Al2O3 as well as high work function HfN gate. The related mechanism is addressed accordingly.

引用

页码：253 / 257

页数：5

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