Aluminum-induced crystallization of silicon suboxide thin films

被引：11

作者：

Zamchiy, A. O. ^{[1
,3
]}

Baranov, E. A. ^{[1
]}

Khmel, S. Ya. ^{[1
]}

Volodin, V. A. ^{[2
,3
]}

Vdovin, V. I. ^{[2
]}

Gutakovskii, A. K. ^{[2
,3
]}

机构：

[1] Kutateladze Inst Thermophys SB RAS, Ac Lavrentiev Ave 1, Novosibirsk 630090, Russia

[2] Rzhanov Inst Semicond Phys SB RAS, Ac Lavrentiev Ave 13, Novosibirsk 630090, Russia

[3] Novosibirsk State Univ, Pirogova Str 2, Novosibirsk 630090, Russia

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2018年 / 124卷 / 09期

基金：

俄罗斯科学基金会;

关键词：

AL-INDUCED CRYSTALLIZATION; VAPOR-DEPOSITION METHOD; INDUCED LAYER EXCHANGE; POLYCRYSTALLINE SILICON; SI FILMS; ORIENTATION; MORPHOLOGY; GLASS;

D O I：

10.1007/s00339-018-2070-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline silicon (poly-Si) thin films are fabricated by aluminum-induced crystallization (AIC) of amorphous silicon suboxide (a-SiO (x) , x = 0.22) at 550 A degrees C for 20 h. AIC of a-SiO0.22 via thermal annealing of a-SiO0.22/Al bilayer structures leads to layer exchange with the formation of poly-Si films with (111) preferential orientation and high-crystalline quality-coated with a layer of a mixture of Al, Si, and O atoms with inclusions of silicon nanocrystallites. The initial a-SiO0.22/Al thickness ratio approximately equal to 1 provides the formation of a discontinuous poly-Si film with a crystallized fraction of 85%, as shown by optical microscopy.

引用

页数：4

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