94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

被引：63

作者：

Marti, Diego ^{[1
]}

Tirelli, Stefano ^{[1
]}

Teppati, Valeria ^{[1
]}

Lugani, Lorenzo ^{[2
]}

Carlin, Jean-Francois ^{[2
]}

Malinverni, Marco ^{[2
]}

Grandjean, Nicolas ^{[2
]}

Bolognesi, C. R. ^{[1
]}

机构：

[1] ETH, Millimeter Wave Elect Grp, CH-8092 Zurich, Switzerland

[2] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 01期

基金：

瑞士国家科学基金会;

关键词：

AlInN/GaN on Si; HEMTs; large-signal; load-pull characterization; 40; GHZ; OUTPUT POWER; PERFORMANCE; TECHNOLOGY;

D O I：

10.1109/LED.2014.2367093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power density of 1.35 W/mm and peak power-added-efficiency of 12% are measured at 94 GHz. The devices exhibit a dc maximum current drain density of 1.6 A/mm and a peak transconductance of 650 mS/mm. In small-signal operation, cutoff frequencies f(T/fMAX) = 141/232 GHz are achieved. The large-signal performance of our AlInN/GaN HEMTs on silicon at 94 GHz stills lags the best reported results one on SiC substrates but nevertheless confirms the tremendous interest of GaN-on-Si HEMT technology for low-cost millimeter-wave electronic applications.

引用

页码：17 / 19

页数：3

共 9 条

[1] Transistor Modeling [J].

Alt, Andreas R. ;

Marti, Diego ;

Bolognesi, C. R. .

IEEE MICROWAVE MAGAZINE, 2013, 14 (04) :83-101

[2]

[Anonymous], 2012, IEEE MTT S INT MICRO

[3]

Higashiwaki M., 2008, P SOC PHOTO-OPT INS, V6894

[4] 150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon [J].

Marti, Diego ;

Tirelli, Stefano ;

Alt, Andreas R. ;

Roberts, John ;

Bolognesi, C. R. .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (10) :1372-1374

[5] First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz [J].

Medjdoub, F. ;

Zegaoui, M. ;

Grimbert, B. ;

Ducatteau, D. ;

Rolland, N. ;

Rolland, P. A. .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (08) :1168-1170

[6] Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz [J].

Soltani, A. ;

Gerbedoen, J-C ;

Cordier, Y. ;

Ducatteau, D. ;

Rousseau, M. ;

Chmielowska, M. ;

Ramdani, M. ;

De Jaeger, J-C .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (04) :490-492

[7] High-Performance 0.1-μm Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz [J].

Sun, Haifeng ;

Alt, Andreas R. ;

Benedickter, Hansruedi ;

Bolognesi, C. R. .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (02) :107-109

[8] A W -Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques [J].

Teppati, Valeria ;

Benedickter, Hansruedi ;

Marti, Diego ;

Garelli, Marco ;

Tirelli, Stefano ;

Loevblom, Rickard ;

Flueckiger, Ralf ;

Alexandrova, Maria ;

Ostinelli, Olivier ;

Bolognesi, Colombo R. .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (01) :148-153

[9]

van Heijningen M, 2012, EUR MICROW INTEGRAT, P135

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