The progress and impact of semiconductor device and processing technology innovation in Japan

被引:0
作者
Sugano, T [1 ]
机构
[1] Univ Tokyo, Dept Elect & Elect Engn, Tokyo 112, Japan
关键词
bipolar transistors; integrated circuits; MOSFET's; process control; semiconductor devices; silicon materials/devices; transistors; very large scale integration;
D O I
10.1109/5.658765
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper is an overview of the progress of the semiconductor devices and processing technologies innovated in Japanese industry and/or academia for the past 50 years and their impact on the advancement of electronics and the fulfillment of technical and social needs. This paper gives an overview of 1) a government initiative research project, 2) strategic research efforts in industry, 3) academia-government-industry collaboration, and 4) recent topics of semiconductor device and technology innovation.
引用
收藏
页码:138 / 149
页数:12
相关论文
共 30 条
  • [1] ABE M, 1984, P INT C SOL STAT DEV, P359
  • [2] ABE T, COMMUNICATION
  • [3] *AG IND SCI TECHN, 1997, IND SCI TECHN FRONT
  • [4] *ASS SUP EL TECHN, 1996, ASET PROJ
  • [5] HOH H, 1997, J I ELECT INFORM COM, V80, P40
  • [6] HOH K, 1997, JPN SOC APPL PHYS, V66, P858
  • [7] INO M, 1996, P ISDM 96 APR, P482
  • [8] HIGH-BIT-RATE, HIGH-INPUT-SENSITIVITY DECISION CIRCUIT USING SI BIPOLAR TECHNOLOGY
    ISHII, K
    ICHINO, H
    KOBAYASHI, Y
    YAMAGUCHI, C
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1994, 29 (05) : 546 - 550
  • [9] HISTORICAL OVERVIEW OF SIMOX
    IZUMI, K
    [J]. VACUUM, 1991, 42 (5-6) : 333 - 340
  • [10] JOSHIN K, 1984, P C SOLID STATE DEVI, P347