Electron beam induced current investigations of Pt/SrTiO3-x interface exposed to chemical and electrical stresses

被引：12

作者：

Jiang, W. ^{[1
]}

Evans, D. ^{[1
]}

Bain, J. A. ^{[2
]}

Skowronski, M. ^{[1
]}

Salvador, P. A. ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 09期

关键词：

annealing; atomic force microscopy; dislocation etching; EBIC; platinum; Schottky barriers; stress effects; strontium compounds; vacancies (crystal); STRONTIUM-TITANATE; SRTIO3; RESISTANCE;

D O I：

10.1063/1.3339303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pt Schottky contacts were fabricated on oxygen deficient SrTiO3-x [001] single crystals. Electron beam induced current (EBIC) and atomic force microscopy images taken on etched SrTiO3 (001) surfaces revealed that the dark {001} oriented lines observed in EBIC correlate with arrays of dislocation etch pits. Annealing contacts in air (at 120 degrees C for 10 min) changed the dislocation-related EBIC contrast from dark to bright. Electrically stressing the air-annealed Schottky contacts at -10 V for 1 h caused the dislocation-related EBIC contrast to return to dark. The contrast changes are interpreted as arising from oxygen vacancy motion in response to chemical or electrical stresses.

引用

页数：3

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