Improved ab initio calculation of surface second-harmonic generation from Si(111)(1x1):H

被引:6
作者
Anderson, Sean M. [1 ]
Tancogne-Dejean, Nicolas [2 ,3 ,4 ]
Mendoza, Bernardo S. [1 ]
Veniard, Valerie [2 ,4 ]
机构
[1] Ctr Invest Opt, Guanajuato, Mexico
[2] Ecole Polytech, CNRS, Solides Irradies Lab, CEA DSM, F-91128 Palaiseau, France
[3] Max Planck Inst Struct & Dynam Matter, Luruper Chaussee 149, D-22761 Hamburg, Germany
[4] European Theoret Spect Facil, Palaiseau, France
关键词
NONLINEAR-OPTICAL SPECTROSCOPY; SILICON SURFACES; SEMICONDUCTOR SURFACES; BULK CONTRIBUTION; INTERFACES; HYDROGEN; SI(100); SI;
D O I
10.1103/PhysRevB.93.235304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We carry out an improved ab initio calculation of surface second-harmonic generation (SSHG) from the Si(111)(1x1):H surface. This calculation includes three new features in one formulation: (i) the scissors correction, (ii) the contribution of the nonlocal part of the pseudopotentials, and (iii) the inclusion of a cut function to extract the surface response, all within the independent particle approximation. We apply these improvements on the Si(111)(1x1):H surface and compare with various experimental spectra from several different sources. We also revisit the three-layer model for the SSHG yield and demonstrate that it provides more accurate results over several, more common, two-layer models. We demonstrate the importance of using properly relaxed coordinates for the theoretical calculations. We conclude that this approach to the calculation of the second-harmonic spectra is versatile and accurate within this level of approximation. This well-characterized surface offers an excellent platform for comparison with theory and allows us to offer this study as an efficient benchmark for this type of calculation.
引用
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页数:9
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