Layer-by-layer growth of ε-Ga2O3 thin film by metal-organic chemical vapor deposition

被引：48

作者：

Chen, Zimin ^{[1
]}

Li, Zeqi ^{[1
]}

Zhuo, Yi ^{[1
]}

Chen, Weiqu ^{[1
]}

Ma, Xuejin ^{[1
]}

Pei, Yanli ^{[1
]}

Wang, Gang ^{[1
,2
]}

机构：

[1] Sun Yat Sen Univ, HEMC, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China

[2] Sun Yat Sen Univ, Foshan Inst, Foshan 528225, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 10期

关键词：

PHASE EPITAXY; GALLIUM OXIDE; GAN; INDIUM;

D O I：

10.7567/APEX.11.101101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Layer-by-layer morphology is a crucial signature of the quality of epitaxial thin films. In this study, layer-by-layer growth of an epsilon-phase gallium oxide (epsilon-Ga2O3) thin film is demonstrated using metal-organic chemical vapor deposition. A two-step growth method, in which a nucleation layer is grown at 600 degrees C and an epilayer is grown at 640 degrees C, is employed to fabricate a high-quality epsilon-Ga2O3 thin film on a c-plane sapphire substrate. The morphology of the epsilon-Ga2O3 film is evaluated by atomic force microscope. The density of screw-type threading dislocations determined by an X-ray diffraction rocking curve is as low as 1.8 x 10(8)cm(-2). (C) 2018 The Japan Society of Applied Physics

引用

页数：4

共 30 条

[1] Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy [J].

Ahmadi, Elaheh ;

Koksaldi, Onur S. ;

Zheng, Xun ;

Mates, Tom ;

Oshima, Yuichi ;

Mishra, Umesh K. ;

Speck, James S. .

APPLIED PHYSICS EXPRESS, 2017, 10 (07)

[2] Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy [J].

Baldini, Michele ;

Albrecht, Martin ;

Fiedler, Andreas ;

Irmscher, Klaus ;

Klimm, Detlef ;

Schewski, Robert ;

Wagner, Guenter .

JOURNAL OF MATERIALS SCIENCE, 2016, 51 (07) :3650-3656

[3] Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD [J].

Boschi, F. ;

Bosi, M. ;

Berzina, T. ;

Buffagni, E. ;

Ferrari, C. ;

Fornari, R. .

JOURNAL OF CRYSTAL GROWTH, 2016, 443 :25-30

[4] Threading edge dislocation arrays in epitaxial GaN: Formation, model and thermodynamics [J].

Chen, Zi-Min ;

Zheng, Zhi-Yuan ;

Chen, Ying-Da ;

Wu, Hua-Long ;

Tong, Cun-Sheng ;

Wang, Gang ;

Wu, Zhi-Sheng ;

Jiang, Hao .

JOURNAL OF CRYSTAL GROWTH, 2014, 387 :48-51

[5] Control of morphology and orientation for textured nanocrystalline indium oxide thin film: A growth zone diagram [J].

Chen, Zimin ;

Zhuo, Yi ;

Hu, Ruiqin ;

Tu, Wenbin ;

Pei, Yanli ;

Fan, Bingfeng ;

Wang, Chengxin ;

Wang, Gang .

MATERIALS & DESIGN, 2017, 131 :410-418

[6] Highly ultraviolet transparent textured indium tin oxide thin films and the application in light emitting diodes [J].

Chen, Zimin ;

Zhuo, Yi ;

Tu, Wenbin ;

Ma, Xuejin ;

Pei, Yanli ;

Wang, Chengxin ;

Wang, Gang .

APPLIED PHYSICS LETTERS, 2017, 110 (24)

[7] Epitaxial engineering of polar ε-Ga2O3 for tunable two-dimensional electron gas at the heterointerface [J].

Cho, Sung Beom ;

Mishra, Rohan .

APPLIED PHYSICS LETTERS, 2018, 112 (16)

[8] The real structure of ε-Ga2O3 and its relation to κ-phase [J].

Cora, Ildiko ;

Mezzadri, Francesco ;

Boschi, Francesco ;

Bosi, Matteo ;

Caplovicova, Maria ;

Calestani, Gianluca ;

Dodony, Istvan ;

Pecz, Bela ;

Fornari, Roberto .

CRYSTENGCOMM, 2017, 19 (11) :1509-1516

[9] Quasiparticle bands and spectra of Ga2O3 polymorphs [J].

Furthmueller, J. ;

Bechstedt, F. .

PHYSICAL REVIEW B, 2016, 93 (11)

[10] Metal organic vapour phase epitaxy of GaN and lateral overgrowth [J].

Gibart, P .

REPORTS ON PROGRESS IN PHYSICS, 2004, 67 (05) :667-715

← 1 2 3 →