Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs

被引：3

作者：

Lu, Ying-Hsin ^{[1
]}

Chang, Ting-Chang ^{[2
,3
,4
]}

Chen, Li-Hui ^{[5
]}

Lin, Yu-Shan ^{[1
]}

Liu, Xi-Wen ^{[1
]}

Liao, Jih-Chien ^{[6
]}

Lin, Chien-Yu ^{[5
]}

Lien, Chen-Hsin ^{[6
]}

Chang, Kuan-Chang ^{[7
]}

Zhang, Sheng-Dong ^{[7
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 804, Taiwan

[5] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan

[6] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

[7] Peking Univ, Dept Elect & Comp Engn, Shenzhen 518055, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 07期

关键词：

Hole injection; hot carrier; impact ionization; abnormal recovery; P-MOSFETS; OXIDE;

D O I：

10.1109/LED.2017.2703309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter investigates an abnormal recovery phenomenon induced by hole injection during hot carrier degradation in silicon-on-insulator n-typemetal-oxide-semiconductor transistors. The method by which the hole injection induces the abnormal recovery behavior can be clarified by different hot carrier degradation (HCD) measurement sequences. According to this HCD result, the channel surface energy band is drawn down and the interface defect will be temporarily shielded, an effect caused by the trapped hole. Furthermore, results of different stress voltage experiments indicate that the amount of hole injection is determined by the electric field between the gate and drain.

引用

页码：835 / 838

页数：4

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