Surface field distribution and breakdown voltage of RESURF LDMOSFETs

被引：38

作者：

Han, SY ^{[1
]}

Kim, HW ^{[1
]}

Chung, SK ^{[1
]}

机构：

[1] Ajou Univ, Dept Elect Engn, Paldal Ku, Suwon 442749, South Korea

来源：

MICROELECTRONICS JOURNAL | 2000年 / 31卷 / 08期

关键词：

reduced surface field technique; breakdown voltage; LDMOSFET;

D O I：

10.1016/S0026-2692(00)00012-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An approximate but analytical expression for the surface held distribution of RESURF LDMOSFETs is presented in terms of the device parameters and the applied drain voltage, which allows calculation of the breakdown voltage via the surface field as a function of the epitaxial layer length. Analytical results are in fair agreement with numerical simulations as well as experimental results reported. (C) 2000 Published by Elsevier Science Ltd.

引用

页码：685 / 688

页数：4

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