A 60GHz Power Amplifier with 12.1 dBm & P1dBCP in 0.18um SiGe BiCMOS Process

被引：0

作者：

Lim, Wei Meng ^{[1
]}

Gu, Jiangmin ^{[2
]}

Feng, Jialin ^{[2
]}

Yeo, Kiat Seng ^{[1
]}

Yu, Xiaopeng ^{[3
]}

Siek, Liter ^{[1
]}

Lim, Kok Meng ^{[1
]}

Boon, Chirn Chye ^{[1
]}

Yang, Wanlan ^{[1
]}

Yan, Jinna ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Soochow Univ, Sch Elect & Informat Engn, Suzhou 215006, Peoples R China

[3] Zhejiang Univ, Sch Elect Engn, Hangzhou 310027, Peoples R China

来源：

2013 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC) | 2013年

关键词：

power amplifier; SiGe; 60GHz ISM band; P-1dB; P-sat; PAE;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes the design and analysis of a four-stages 60GHz SiGe BiCMOS power amplifier. The proposed circuit uses single-ended common-emitter topology that draws 72mW from 1.8V supply. It is able to deliver 12.1dBm output, 17.4dB power gain with a peak 14.1% PAE at its compression point. The S21 has a 3dB bandwidth from 55GHz to 67GHz, which covers the whole of 60GHz band. The power amplifier occupy a silicon area of 1.1 x 0.46 um(2) and the measured results show that it can be fully adopted in the 60GHz ISM band applications.

引用

页码：138 / 141

页数：4

共 10 条

[1] Forstner H. P., 2011, 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2011), P129, DOI 10.1109/SIRF.2011.5719318
[2] Glisic S., 2011, 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2011), P149, DOI 10.1109/SIRF.2011.5719304
[3] A 13.5-to-17 dBm P1dB, Selective, High-Gain Power Amplifier for 60 GHz Applications in SiGe
Glisic, Srdjan
Scheytt, Christoph
[J]. PROCEEDINGS OF THE 2008 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2008, : 65 - 68
[4] Hamidian Amin, 2009, 2009 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC 2009), P783, DOI 10.1109/IMOC.2009.5427474
[5] 60 GHz Wide-Band Power Amplifier
Hamidian, Amin
Boeck, Georg
[J]. PROCEEDINGS OF THE 2009 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2009, : 47 - 50
[6] Hamidian Amin, 2010, IEEE EUR MICR C SEP, P1686
[7] A 20 dBm fully-integrated 60 GHz SiGe power amplifier with automatic level control
Pfeiffer, Ullrich R.
Goren, David
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (07) : 1455 - 1463
[8] Renjing Pan, 2011, 2011 International SoC Design Conference (ISOCC 2011), P13, DOI 10.1109/ISOCC.2011.6138634
[9] Valdes-Garcia Alberto, 2010, 2010 IEEE International Solid-State Circuits Conference (ISSCC), P218, DOI 10.1109/ISSCC.2010.5433956
[10] Wang C.-H., 2006, IEEE INT SOLID STATE, P659

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