Nanocrystalline copper and nickel as ultra high-density chip-to-package interconnections

被引:9
作者
Bansal, S [1 ]
Saxena, A [1 ]
Tummala, RR [1 ]
机构
[1] Georgia Inst Technol, NSF Microsyst Packaging Res Ctr, Atlanta, GA 30332 USA
来源
54TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2004年
关键词
D O I
10.1109/ECTC.2004.1320336
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nanocrystalline (nc) copper and nickel are being explored as candidate interconnect materials for nanoscale interconnections to meet the requirements of fine pitch, superior electrical and mechanical performance while also catering to the environmental and cost concerns. Bulk nanocrystalline copper and nickel (99.999% purity) specimens of average grain size of about 50 nm were prepared by equichannel angular extrusion (ECAE). Both micro- and nanohardness measurements showed a significant increase in the hardness of the bulk specimens. The grain size analysis shows that copper is stable up to 100 degreesC and the activation energy for grain growth was calculated to be around 35 KJ/mol. The nickel specimens were found to be stable up to 250 degreesC. The tensile strength of these materials has been found to be 5-6 times of the conventional microcrystal line forms and the fracture toughness, J(1C), values for nc- copper and nickel have been found to be 21.66 KJ/m(2) and 12.13 KJ/m(2), respectively, which are high for these strength levels indicating considerable capacity for plastic deformation in these materials prior to fracture.
引用
收藏
页码:1647 / 1651
页数:5
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