Deposition of electroceramic thin films by MOCVD

被引：0

作者：

Lindner, J ^{[1
]}

Schumacher, M ^{[1
]}

Dauelsberg, M ^{[1
]}

Schienle, F ^{[1
]}

Miedl, S ^{[1
]}

Burgess, D ^{[1
]}

Merz, E ^{[1
]}

Strauch, G ^{[1
]}

Juergensen, H ^{[1
]}

机构：

[1] AIXTRON AG, D-52072 Aachen, Germany

来源：

ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS | 2000年 / 10卷 / 3-5期

关键词：

MOCVD; ferroelectric thin films; dielectric thin films; BST; PZT; SBT; liquid delivery; DRAM; FRAM; simulation; showerhead;

D O I：

10.1002/1099-0712(200005/10)10:3/5<163::AID-AMO405>3.0.CO;2-A

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

MOCVD (metal-organic chemical vapor deposition) of new materials, such as perovskite-type ceramic thin films, will be a major key technology in the field of ULSI non-volatile and volatile memory applications. This article outlines the latest trends in the field of MOCVD equipment and process development, in particular In the field of high k-dielectric and ferroelectrics, Using liquid precursor delivery systems reproducible evaporation can be achieved, Furthermore, perfect temperature control, as well as a precise gas and vapor flow control through the gas inlet to the substrate, ensure high quality BST, PZT and SET thin films, bearing superior electrical and microstructural properties and near 100% step coverage at low process temperatures. Copyright (C) 2000 John Wiley & Sons, Ltd.

引用

页码：163 / 167

页数：5

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