Radiation damage in ?-Ga2O3 induced by swift heavy ions

被引：19

作者：

Ai, Wensi ^{[1
,4
]}

Xu, Lijun ^{[1
,4
]}

Nan, Shuai ^{[2
,3
,4
]}

Zhai, Pengfei ^{[1
,4
]}

Li, Weixing ^{[2
,3
,4
]}

Li, Zongzhen ^{[1
,4
]}

Hu, Peipei ^{[1
,4
]}

Zeng, Jian ^{[1
,4
]}

Zhang, Shengxia ^{[1
,4
]}

Liu, Li ^{[1
,4
]}

Sun, Youmei ^{[1
,4
]}

Liu, Jie ^{[1
,4
]}

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China

[2] Chinese Acad Sci, CAS Ctr Excellence Tibetan Plateau Earth Sci, Inst Tibetan Plateau Res, Beijing 100101, Peoples R China

[3] Chinese Acad Sci, Key Lab Continental Collis & Plateau Uplift, Inst Tibetan Plateau Res, Beijing 100101, Peoples R China

[4] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / 12期

基金：

中国国家自然科学基金;

关键词：

THERMAL SPIKE MODEL; TRACK FORMATION; CROSS-SECTION; AMORPHIZATION; IRRADIATION; OXIDES;

D O I：

10.7567/1347-4065/ab5599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The amorphous latent tracks in ?-Ga2O3 single crystal irradiated with ?5?10;MeV;u(?1) Ta-181 and Kr-86 ions were investigated by transmission electron microscopy (TEM). TEM images showed that the mean diameter of latent tracks increased from 2.2 to 8.8;nm with electronic energy loss (S-e) values increasing from 18.3 to 41.5;keV;nm(?1). Moreover, the inelastic thermal spike model was used to predict the latent track size. The calculation results agreed well with the experimental results and the predicted S-e threshold of latent track formation in ?-Ga2O3 was about 17;keV;nm(?1) for 5?10;MeV;u(?1) heavy ions.

引用

页数：5

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