Plasma etching phenomena in heavily boron-doped diamond growth

被引：10

作者：

Fiori, Alexandre ^{[1
]}

Teraji, Tokuyuki ^{[2
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Young Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

基金：

日本学术振兴会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; MIXTURES; DEFECTS;

D O I：

10.1016/j.diamond.2017.04.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heavily boron-doped diamond growth turned into etching when boron-to-carbon molar ratios in the feed gas exceeded 1% and the carbon fraction was below 0.7%, under the constant microwave power density and gas pressure. Doping efficiency, diamond surface morphology, and plasma optical emissions have been investigated. Bright BH (A(1)Pi-X-1 Sigma) emission, at ca. 433 nm, has been correlated with etching features observed on the diamond surface. The analysis of the boron concentration by cathodoluminescence has revealed no diamond film growth under the bright BH emission conditions. The study of plasma optical emissions put forward the contribution of boron species in the chemical etching process.

引用

页码：38 / 43

页数：6

共 23 条

[1] Critical boron-doping levels for generation of dislocations in synthetic diamond [J].

Alegre, M. P. ;

Araujo, D. ;

Fiori, A. ;

Pinero, J. C. ;

Lloret, F. ;

Villar, M. P. ;

Achatz, P. ;

Chicot, G. ;

Bustarret, E. ;

Jomard, F. .

APPLIED PHYSICS LETTERS, 2014, 105 (17)

[2] Boron acceptor concentration in diamond from excitonic recombination intensities [J].

Barjon, J. ;

Tillocher, T. ;

Habka, N. ;

Brinza, O. ;

Achard, J. ;

Issaoui, R. ;

Silva, F. ;

Mer, C. ;

Bergonzo, P. .

PHYSICAL REVIEW B, 2011, 83 (07)

[3]

Bousquet J., 2016, PHASE DIAGRAM BORON

[4] Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures [J].

Chicot, G. ;

Fiori, A. ;

Volpe, P. N. ;

Thi, T. N. Tran ;

Gerbedoen, J. C. ;

Bousquet, J. ;

Alegre, M. P. ;

Pinero, J. C. ;

Araujo, D. ;

Jomard, F. ;

Soltani, A. ;

De Jaeger, J. C. ;

Morse, J. ;

Haertwig, J. ;

Tranchant, N. ;

Mer-Calfati, C. ;

Arnault, J. C. ;

Delahaye, J. ;

Grenet, T. ;

Eon, D. ;

Omnes, F. ;

Pernot, J. ;

Bustarret, E. .

JOURNAL OF APPLIED PHYSICS, 2014, 116 (08)

[5] Diamond Schottky diodes with ideality factors close to 1 [J].

Fiori, A. ;

Teraji, T. ;

Koide, Y. .

APPLIED PHYSICS LETTERS, 2014, 105 (13)

[6] Boron-doped superlattices and Bragg mirrors in diamond [J].

Fiori, A. ;

Bousquet, J. ;

Eon, D. ;

Omnes, F. ;

Bellet-Amalric, E. ;

Bustarret, E. .

APPLIED PHYSICS LETTERS, 2014, 105 (08)

[7] Simulations of carrier confinement in boron δ-doped diamond devices [J].

Fiori, Alexandre ;

Pernot, Julien ;

Gheeraert, Etienne ;

Bustarret, Etienne .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (09) :2084-2087

[8] Spectroscopic study of H2 microwave plasmas with small admixtures of CH4 and B2H6 used for doped diamond deposition [J].

Hamann, S. ;

Rond, C. ;

Pipa, A. V. ;

Wartel, M. ;

Lombardi, G. ;

Gicquel, A. ;

Roepcke, J. .

PLASMA SOURCES SCIENCE & TECHNOLOGY, 2014, 23 (04)

[9] Growth of thick heavily boron-doped diamond single crystals: Effect of microwave power density [J].

Issaoui, R. ;

Achard, J. ;

Silva, F. ;

Tallaire, A. ;

Tardieu, A. ;

Gicquel, A. ;

Pinault, M. A. ;

Jomard, F. .

APPLIED PHYSICS LETTERS, 2010, 97 (18)

[10] Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition [J].

Kawano, Akihiro ;

Ishiwata, Hitoshi ;

Iriyama, Shingo ;

Okada, Ryosuke ;

Yamaguchi, Takahide ;

Takano, Yoshihiko ;

Kawarada, Hiroshi .

PHYSICAL REVIEW B, 2010, 82 (08)

← 1 2 3 →