Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers

被引：36

作者：

Nishiyama, N ^{[1
]}

Arai, M ^{[1
]}

Shinada, S ^{[1
]}

Suzuki, K ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Yokohama, Kanagawa 2268503, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 06期

关键词：

GaAs (311)B substrates; oxidation; single mode; surface emitting lasers;

D O I：

10.1109/68.849058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a novel vertical-cavity surface emitting laser (VCSEL) with Al(Ga)As multi-oxide layer (MOX) structure for the purpose of enlarging window aperture maintaining single transverse mode operation. We have fabricated an InGaAs-GaAs VCSEL with the proposed MOX structure formed on GaAs (311)B substrate. We have performed a numerical simulation to investigate single-mode behavior of the proposed structure and showed a possibility of single-mode VCSEL's with a large active area. We have fabricated an 11-mu m current aperture 960-nm wavelength VCSEL with this MOX structure. The threshold current and voltage were 1.0 mA and 2.0 V, respectively, which are comparable to those of conventional oxide VCSEL's. In 8-mu m aperture, single-mode operation was maintained with a driving current up to four times the threshold.

引用

页码：606 / 608

页数：3

共 13 条

[1] Leaky mode vertical cavity lasers using cavity resonance modification [J].