Interaction of dislocations with low angle tilt boundaries in fcc crystals

被引：10

作者：

Verdhan, Naisheel ^{[1
]}

Kapoor, Rajeev ^{[1
]}

机构：

[1] Bhabha Atom Res Ctr, Mat Grp, Bombay 400088, Maharashtra, India

来源：

COMPUTATIONAL MATERIALS SCIENCE | 2015年 / 98卷

关键词：

Discrete dislocation dynamics; Dislocation boundaries; Strain hardening; Face-centered cubic crystals; TRANSMISSION ELECTRON-MICROSCOPE; COMPUTER MODELING EXPERIMENTS; IN-SITU TEM; GRAIN-BOUNDARY; LATTICE DISLOCATIONS; SLIP TRANSMISSION; METALS; JUNCTIONS; NANOINDENTATION; SIMULATIONS;

D O I：

10.1016/j.commatsci.2014.11.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interaction of dislocations with low angle tilt boundaries (LATB) in fcc metals was studied using discrete dislocation dynamics. A symmetrical LATB was constructed using glissile edge dislocations. Free glissile dislocations on different slip systems were allowed to react with the boundary to produce an array of binary junctions of the type collinear, Lomer, and two variants of the glissile junction glissile-a and glissile-b. The simulations were run at constant shear strain rate as computed on the slip system of the incoming dislocation. The transmission resistance was taken as the minimum resolved shear stress required to break the array of junctions. The transmission resistance was higher for collinear and glissile-a junctions, which had a 90 degrees angle between glide plane of the incoming dislocation and the LATB plane, as compared to Lomer and glissile-b for which the angle was 35.2 degrees. With increasing dislocation density within the boundary the transmission resistance increased for all interactions, with the increase being higher for collinear and glissile-a than for Lomer and glissile-b. The transmission resistance was found to be inversely related to the unreacted arm length of the incoming dislocation. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：149 / 157

页数：9

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