Model for C defect on Si(100):: The dissociative adsorption of a single water molecule on two adjacent dimers -: art. no. 153307

被引：73

作者：

Hossain, MZ ^{[1
]}

Yamashita, Y ^{[1
]}

Mukai, K ^{[1
]}

Yoshinobu, J ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778521, Japan

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.67.153307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The origin and atomic structure of C-defect on Si(100) have been unambiguously identified. Two pairs of enantiomorphic protrusions of C-defect have been observed by low-temperature scanning tunnelling microscopy (STM). These are attributed to the dissociative adsorption of a single water molecule on two adjacent dimers. Two unreacted dangling bonds on these dimers have different electronic states which are visualized in unoccupied state STM images.

引用

页数：4

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