Model for C defect on Si(100):: The dissociative adsorption of a single water molecule on two adjacent dimers -: art. no. 153307

被引：73

作者：

Hossain, MZ ^{[1
]}

Yamashita, Y ^{[1
]}

Mukai, K ^{[1
]}

Yoshinobu, J ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778521, Japan

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.67.153307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The origin and atomic structure of C-defect on Si(100) have been unambiguously identified. Two pairs of enantiomorphic protrusions of C-defect have been observed by low-temperature scanning tunnelling microscopy (STM). These are attributed to the dissociative adsorption of a single water molecule on two adjacent dimers. Two unreacted dangling bonds on these dimers have different electronic states which are visualized in unoccupied state STM images.

引用

页数：4

共 24 条

[1] Theoretical study of the hydrogen relay dissociation of water molecules on Si(001) surfaces [J].

Akagi, K ;

Tsukada, M .

SURFACE SCIENCE, 1999, 438 (1-3) :9-17

[2]

AKAGI K, COMMUNICATION

[3] STM STUDIES OF SI(100)-2 X-1 OXIDATION - DEFECT CHEMISTRY AND SI EJECTION [J].

AVOURIS, P ;

CAHILL, DG .

ULTRAMICROSCOPY, 1992, 42 :838-844

[4] EVIDENCE OF DISSOCIATION OF WATER ON THE SI(100)2X1 SURFACE [J].

CHABAL, YJ ;

CHRISTMAN, SB .

PHYSICAL REVIEW B, 1984, 29 (12) :6974-6976

[5] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1979, 43 (01) :43-47

[6] SI(100)-(2X1) SURFACE-DEFECTS AND DISSOCIATIVE AND NONDISSOCIATIVE ADSORPTION OF H2O STUDIED WITH SCANNING-TUNNELING-MICROSCOPY [J].

CHANDER, M ;

LI, YZ ;

PATRIN, JC ;

WEAVER, JH .

PHYSICAL REVIEW B, 1993, 48 (04) :2493-2499

[7] Dissociative adsorption of water on the Si(001) surface: A first-principles study [J].

Cho, JH ;

Kim, KS ;

Lee, SH ;

Kang, MH .

PHYSICAL REVIEW B, 2000, 61 (07) :4503-4506

[8] Heterogeneous nucleation of oxygen on silicon: Hydroxyl-mediated interdimer coupling on Si(100)-(2x1) [J].

Gurevich, AB ;

Stefanov, BB ;

Weldon, MK ;

Chabal, YJ ;

Raghavachari, K .

PHYSICAL REVIEW B, 1998, 58 (20) :13434-13437

[9] DETERMINATION OF THE LOCAL ELECTRONIC-STRUCTURE OF ATOMIC-SIZED DEFECTS ON SI(001) BY TUNNELING SPECTROSCOPY [J].

HAMERS, RJ ;

KOHLER, UK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2854-2859

[10] Structure transformation of the C defects observed at low temperature (80 K) [J].

Hata, K ;

Morita, R ;

Yamashita, M ;

Shigekawa, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (6B) :3837-3840

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