Photoelectrochemical texturization of n-type multicrystalline silicon

被引：3
|
作者：
Tena-Zaera, R. [1 ]
Bastide, S. [1 ]
Levy-Clement, C. [1 ]
机构：
[1] CNRS, UMR 7182, ICMPE, F-94320 Thiais, France
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 05期
关键词：
D O I：
10.1002/pssa.200674304
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Taking advantage of the electrochemical formation of macropores in 'aqueous HF under illumination, we have developed an efficient photoelectrochemical (PEC) texturization on n-type multicrystalline Si (mc-Si) wafers which leads to a decrease in the reflectivity of solar cells. An optimized mc-Si texturized surface exhibits an 8.5% effective reflectivity (lambda = 400-1000 nm, AM1.5 standard solar illumination). (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1260 / 1265
页数：6
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