Disorder-induced microscopic magnetic memory

被引:101
作者
Pierce, MS [1 ]
Buechler, CR
Sorensen, LB
Turner, JJ
Kevan, SD
Jagla, EA
Deutsch, JM
Mai, T
Narayan, O
Davies, JE
Liu, K
Dunn, JH
Chesnel, KM
Kortright, JB
Hellwig, O
Fullerton, EE
机构
[1] Univ Washington, Dept Phys, Seattle, WA 98195 USA
[2] Univ Oregon, Dept Phys, Eugene, OR 97403 USA
[3] Abdus Salam Int Ctr Theoret Phys, Trieste, Italy
[4] Univ Calif Santa Cruz, Dept Phys, Santa Cruz, CA 95064 USA
[5] Univ Calif Davis, Dept Phys, Davis, CA 95616 USA
[6] MAX Lab, SE-22100 Lund, Sweden
[7] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[8] Hitachi Global Storage Technol, San Jose, CA 95120 USA
关键词
D O I
10.1103/PhysRevLett.94.017202
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using coherent x-ray speckle metrology, we have measured the influence of disorder on major loop return point memory (RPM) and complementary point memory (CPM) for a series of perpendicular anisotropy Co/Pt multilayer films. In the low disorder limit, the domain structures show no memory with field cycling-no RPM and no CPM. With increasing disorder, we observe the onset and the saturation of both the RPM and the CPM. These results provide the first direct ensemble-sensitive experimental study of the effects of varying disorder on microscopic magnetic memory and are compared against the predictions of existing theories.
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页数:4
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