Resistance Electric Field Dependence and Time Drift of Piezoresistive Single Crystalline Silicon Nano films

被引：6

作者：

Anderas, Emil ^{[1
]}

Vestling, Lars ^{[2
]}

Olsson, Jorgen ^{[2
]}

Katardjiev, Ilia ^{[2
]}

机构：

[1] Radi Med Syst AB, POB 6350, SE-75135 Uppsala, Sweden

[2] Uppsala Univ, Angstrom Lab, Solid State Elect, SE-75121 Uppsala, Sweden

来源：

PROCEEDINGS OF THE EUROSENSORS XXIII CONFERENCE | 2009年 / 1卷 / 01期

基金：

瑞典研究理事会;

关键词：

piezoresistance; nanofilm; time drift;

D O I：

10.1016/j.proche.2009.07.020

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The piezoresistive properties of single-crystalline silicon nanofilms are studied. Resistors were fabricated on 130nm thick SOI-silicon and measurements indicate that the conductivity is extremely sensitive to substrate bias and can therefore be controlled by varying the backside potential. Another important parameter is the resistivity time drift. Long time measurements show a drastic variation in the resistance. Not even after several hours of measurement is steady state reached. The drift is explained by hole injection into the BOX as well as existence of mobile charges in the BOX. The piezoresistive effect was studied and shown to be the same as bulk silicon.

引用

页码：80 / +

页数：2