Inter-island energy transfer and in-plane exciton migration in AlGaAs/GaAs quantum wells detected by exciton dynamics

被引：0
|
作者：
Godlewski, M
Holz, PO
Bergman, JP
Monemar, B
Reginski, K
Bugajski, A
Goldys, EM
Tansley, TL
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Linkoping Univ, Dept Phys & Measurement Technol, S-581 Linkoping, Sweden
[3] Inst Electron Technol, PL-02668 Warsaw, Poland
[4] Macquarie Univ, Semicond Sci & Technol Labs, N Ryde, NSW 2109, Australia
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1998年 / 23卷 / 01期
关键词：
quantum wells; GaAs/AlGaAs; exciton dynamics;
D O I：
10.1006/spmi.1996.0290
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present the results of optical, steady-state and time-resolved studies of photoluminescence and photoluminescence excitation in high-quality Al0.3Ga0.7As/GaAs quantum wells in which the presence of large (larger than the exciton radius) atomically flat islands can be inferred, identical to the case of interrupted MBE growth. Migration of excitons towards lower-lying energy states induced by local potential fluctuations and/or progressive localisation has been revealed and the transition rate between quantum well regions 24 to 25 monolayers thick has been derived to be 290 ps(-1). (C) 1998 Academic Press Limited.
引用
收藏
页码：107 / 111
页数：5
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