Effect of localized vibrations on the Si surface concentrations of H and D

被引：13

作者：

Ipatova, IP ^{[1
]}

Chikalova-Luzina, OP

Hess, K

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 02期

关键词：

D O I：

10.1063/1.366762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The equilibrium concentration of passivating adatoms in the system of Si crystal plus the gas of H-2 (or D-2) molecules is calculated The effect of adatom localized vibrations on the equilibrium concentration is taken into account. It is shown that the substitution of D for H loads to an increase of the adatom concentration by 1-1.5 orders of magnitude. (C) 1998 American Institute of Physics. [S0021-8979(98)00402-2].

引用

页码：814 / 819

页数：6

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