Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO

被引：9
作者：
Lu, Y. F. [1 ]
Ye, Z. Z. [1 ]
Zeng, Y. J. [1 ]
Zhu, L. P. [1 ]
Huang, J. Y. [1 ]
Zhao, B. H. [1 ]
机构：
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 07期
基金：
中国国家自然科学基金;
关键词：
p-type ZnO; Ohmic contacts; CTLM; SIMS; NI/AU; FILMS;
D O I：
10.1016/j.sse.2010.03.012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO were fabricated in this paper. Ni/Pt Ohmic contacts showed a lowest specific contact resistivity of 3.81 x 10(-6) Omega cm(2) after 450 degrees C annealing, which is lower than any other reported Ohmic contacts to p-type ZnO. The interface reactions during annealing and the Ohmic contact formation mechanism were investigated by secondary ion mass spectrometry measurements. The results showed that Ni out-diffused to react with Pt and Zn out-diffused a little, too. These interface diffusions as well as activation of N acceptors during annealing induced such a low specific contact resistivity. (C) 2010 Elsevier Ltd. All rights reserved.
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收藏
页码：732 / 735
页数：4
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