Temperature-dependent energy gap variation in InAs/GaAs quantum dots

被引：12
作者：
Lu, Xuejun [1 ]
Vaillancourt, Jarrod [2 ]
Wen, Hong [1 ]
机构：
[1] Univ Massachusetts, Dept Elect & Comp Engn, Lowell, MA 01854 USA
[2] Appl NanoFemto Technol LLC, Lowell, MA 01851 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 17期
基金：
美国国家科学基金会;
关键词：
electron-phonon interactions; energy gap; gallium arsenide; III-V semiconductors; indium compounds; photoluminescence; semiconductor quantum dots; PHOTOLUMINESCENCE;
D O I：
10.1063/1.3396986
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, we report a photoluminescence (PL) study of the temperature-dependent energy gap variation in InAs/GaAs quantum dots (QD). Energy gaps E(T) of different InAs/GaAs QD samples with various numbers of QD stacking layers were measured from the ground state PL emissions at various sample temperatures. For each of the QD samples, linear dependences between [E(T)-E-0](beta+T) and T (where E-0=0.42 eV and beta=-550 K) is obtained in low and high temperature regions. The transition temperatures between the two temperature regions are found to be related to the numbers of QD stacking layers. A linear relation between the number of the QDs and the phonon densities at the corresponding transition temperatures is obtained.
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页数：3
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