High-Temperature Stability Performance of 4H-SiC Schottky Diodes

被引：0
|
作者：
Maset, E. [1 ]
Sanchis-Kilders, E. [1 ]
Jordan, J. [1 ]
Ejea, J. Bta [1 ]
Ferreres, A. [1 ]
Esteve, V. [1 ]
Millan, J. [2 ]
Godignon, P. [2 ]
机构：
[1] Univ Valencia, LEII Elect Engn Dept, E-46100 Valencia, Spain
[2] MICELECT NATL CTR, LEII Elect Engn Dept, E-46100 Valencia, Spain
来源：
EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9 | 2009年
关键词：
SiC-device; Thermal stress; Discrete power device; Reliability; Aerospace;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
Silicon Carbide 300V-5A Schottky diodes for high-temperature space applications have been fabricated and characterized. A reliability test, with a DC current stress at 270 degrees C during 600 hours has demonstrated the capability to operate up to 300 degrees C. The main point in this development was the top metallization scheme, where W was used, instead Ni, as Schottky metal, eliminating the voltage drift and producing a stable metal-semiconductor interface In this paper we present the development and characterization of a 300V Schottky Silicon Carbide diode for the high ambient temperature of the BepiColombo Mission using 4H-SiC epitaxied wafers purchased from CREE Research, focusing on the reliability and performance limitations for the blocking stability and forward voltage degradation.
引用
收藏
页码：1887 / +
页数：2
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