Dephasing effects on laser gain shallow and deep semiconductor quantum dots

被引：0
|
作者：
Chow, WW [1 ]
Huffaker, DL [1 ]
机构：
[1] Sandia Natl Labs, Ctr Compund Semicond Sci & Technol, Albuquerque, NM 87185 USA
来源：
2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST | 2004年
关键词：
D O I：
10.1109/ISLC.2004.1382770
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Effects of excitation-induced dephasing are investigated for semiconductor quantum-dot lasers.
引用
收藏
页码：91 / 92
页数：2
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