Temperature dependence measurements and performance analyses of high-efficiency interdigitated back-contact, passivated emitter and rear cell, and silicon heterojunction photovoltaic modules

The temperature dependences of monocrystalline silicon (mono-Si), interdigitated back-contact (IBC), passivated emitter and rear cell (PERC), silicon heterojunction (SHJ), and multicrystalline silicon (multi-Si) photovoltaic (PV) modules are estimated. Their characteristics such as temperature coefficients (TCs) for the maximum power (P-max), open-circuit voltage (V-oc), and efficiency are measured. IBC, PERC, SHJ, mono-Si, and multi-Si exhibit TCs at 25 degrees C of P-max and efficiency of -0.378, -0.404 to -0.373, -0.279, -0.432 to -0.415, and -0.516%/degrees C, respectively. IBC, PERC, SHJ, mono-Si, and multi-Si exhibit TCs at 25 degrees C of V-oc of -0.267, -0.269 to -0.263, -0.218, -0.312 to -0.306, and -0.334%/degrees C, respectively. Thus, IBC, PERC, and SHJ show weaker temperature dependences than mono-Si and multi-Si. The efficiencies of IBC, PERC, and SHJ at 25 degrees C are 19.00, 18.81 to 19.25, and 21.40%, whereas those of mono-Si and multi-Si are 15.84 to 17.26 and 15.54%, respectively. Thus, IBC, PERC, and SHJ are more efficient than mono-Si and multi-Si in the temperature range higher than 25 degrees C. (c) 2018 The Japan Society of Applied Physics.