3.3kV 4H-SiC Semi-SJ MOSFET for Low OnResistance and Switching Loss

被引：0
作者：
Cheon, Jinhee [1 ]
Kim, Kwansoo [1 ]
机构：
[1] Sogang Univ, Dept Elect Engn, Seoul, South Korea
来源：
2020 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC) | 2020年
关键词：
SiC MOSFET; semi-superjunctiont; switching loss; input capacitance; on-resistance;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, semi-superjunction MOSFET structure with improved electrical characteristic was proposed. Through TCAD simulation, static and dynamic characteristic of conventional and proposed structure were compared and analyzed. The semi-superjunction structure has superior static characteristic, partly by introducing superjunction, improving both breakdown voltage and on- resistance. Moreover, since input capacitance of semi-superjunction structure is the smallest, it has smaller switching energy loss and superior dynamic characteristics compared to conventional structure.
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页数：6
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