3.3kV 4H-SiC Semi-SJ MOSFET for Low OnResistance and Switching Loss

被引：0

作者：

Cheon, Jinhee ^{[1
]}

Kim, Kwansoo ^{[1
]}

机构：

[1] Sogang Univ, Dept Elect Engn, Seoul, South Korea

来源：

2020 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC) | 2020年

关键词：

SiC MOSFET; semi-superjunctiont; switching loss; input capacitance; on-resistance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, semi-superjunction MOSFET structure with improved electrical characteristic was proposed. Through TCAD simulation, static and dynamic characteristic of conventional and proposed structure were compared and analyzed. The semi-superjunction structure has superior static characteristic, partly by introducing superjunction, improving both breakdown voltage and on- resistance. Moreover, since input capacitance of semi-superjunction structure is the smallest, it has smaller switching energy loss and superior dynamic characteristics compared to conventional structure.

引用

页数：6

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