Electromigration-induced Kirkendall voids at the Cu/Cu3Sn interface in flip-chip Cu/Sn/Cu joints

被引:48
作者
Liu, C. Y. [1 ]
Chen, J. T. [1 ]
Chuang, Y. C. [1 ]
Ke, Lin [1 ]
Wang, S. J. [1 ]
机构
[1] Natl Cent Univ, Dept Chem Engn & Mat Engn, Jhongli 310, Taiwan
关键词
D O I
10.1063/1.2714100
中图分类号
O59 [应用物理学];
学科分类号
摘要
Polarity void formation has been observed at the Cu3Sn/Cu interfaces in current-stressed Cu/Sn/Cu flip-chip joints. Electromigration voids were observed at the Cu3Sn/Cu anode interface, but no voids were found at the Cu3Sn/Cu cathode interface. The backstress in the anode's Cu trace line caused a vacancy backflow toward the Cu3Sn/Cu anode interface, which led to serious void formation. In the opposite Cu3Sn/Cu cathode interface, Cu atoms in the cathode's Cu trace line electromigrated toward the Cu3Sn/Cu cathode interface, which alleviated or healed possible Kirkendall void formation due to the normal annealing process. (c) 2007 American Institute of Physics.
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页数:3
相关论文
共 16 条
[1]   DIFFUSION IN BIMETAL VAPOR-SOLID COUPLES [J].
BALLUFFI, RW ;
SEIGLE, LL .
JOURNAL OF APPLIED PHYSICS, 1954, 25 (05) :607-614
[2]  
BRANDENBERY S, UNP SURF MOUNT INT C, P337
[3]   Polarity effect of electromigration on kinetics of intermetallic compound formation in Pb-free solder V-groove samples [J].
Gan, H ;
Tu, KN .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)
[4]  
HEUMANN T, 1953, Z METALLKD, V44, P139
[5]   Prevention of electromigration-induced Cu pad dissolution by using a high electromigration-resistance ternary Cu-Ni-Sn layer [J].
Hsiao, YH ;
Chuang, YC ;
Liu, CY .
SCRIPTA MATERIALIA, 2006, 54 (04) :661-664
[6]   Electromigration of eutectic SnPb solder interconnects for flip chip technology [J].
Lee, TY ;
Tu, KN ;
Kuo, SM ;
Frear, DR .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (06) :3189-3194
[7]   Electromigration of eutectic SnPb and SnAg3.8Cu0.7 flip chip solder bumps and under-bump metallization [J].
Lee, TY ;
Tu, KN ;
Frear, DR .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (09) :4502-4508
[8]   Study of electromigration-induced Cu consumption in the flip-chip Sn/Cu solder bumps [J].
Liu, C. Y. ;
Ke, Lin ;
Chuang, Y. C. ;
Wang, S. J. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (08)
[9]   Segregant-induced cavitation of Sn/Cu reactive interface [J].
Liu, PL ;
Shang, JK .
SCRIPTA MATERIALIA, 2005, 53 (06) :631-634
[10]   Electromigration studies on Sn(Cu) alloy lines [J].
Lu, CC ;
Wang, SJ ;
Liu, CY .
JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (12) :1515-1522