A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS Technology

被引:5
作者
Vogelsang, Florian [1 ]
Bredendiek, Christian [2 ]
Schoepfel, Jan [1 ]
Ruecker, Holger [3 ]
Pohl, Nils [1 ,2 ]
机构
[1] Ruhr Univ Bochum, Inst Integrated Syst, Bochum, Germany
[2] Fraunhofer Inst High Frequency Phys & Radar Techn, Wachtberg, Germany
[3] IHP Leibniz Inst Innovat Mikroelekt, D-15236 Frankfurt, Oder, Germany
来源
2022 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS | 2022年
关键词
static frequency divider; frequency synthesis; SiGe BiCMOS; mm-Wave;
D O I
10.1109/BCICTS53451.2022.10051704
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents a static divide-by-16 in a 130-nm SiGe-BiCMOS technology, aiming to demonstrate the technologies' potential. A bias network followed by four divide-by-2 stages and an output buffer is designed. The DC power consumption of the first divider stage and the four divider flip flops in static current mode logic (CML) with buffer is 134.3 mW and 396 mW, respectively. The maximum input frequency of the divider is 163 GHz. The corresponding necessary input power at the divider's bias network is 4.39 dBm. The observed self-oscillating frequency is 110.56 GHz, while the output power at the by-16 output of the divider is around -9 dBm. Moreover, a special focus is set on the accuracy of divider simulations and the influence of parasitic elements compared to measurement results.
引用
收藏
页码:49 / 52
页数:4
相关论文
共 10 条
[1]  
Ali U, 2015, 2015 GERMAN MICROWAVE CONFERENCE, P241, DOI 10.1109/GEMIC.2015.7107798
[2]  
D'Amore M, 2009, COMP SEMICOND INTEGR, P165
[3]   Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology [J].
Fox, Alexander ;
Heinemann, Bernd ;
Ruecker, Holger ;
Barth, Rainer ;
Fischer, Gerhard G. ;
Wipf, Christian ;
Marschmeyer, Steffen ;
Aufinger, Klaus ;
Boeck, Josef ;
Boguth, Sabine ;
Knapp, Herbert ;
Lachner, Rudolf ;
Liebl, Wolfgang ;
Manger, Dirk ;
Meister, Thomas F. ;
Pribil, Andreas ;
Wursthorn, Jonas .
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (07) :642-644
[4]  
Heinemann B., 2016, 2016 IEEE International Electron Devices Meeting (IEDM), p3.1.1, DOI 10.1109/IEDM.2016.7838335
[5]   Static Frequency Dividers up to 133 GHz in SiGe:C Bipolar Technology [J].
Knapp, Herbert ;
Meister, Thomas F. ;
Liebl, Wolfgang ;
Claeys, Dieter ;
Popp, Thomas ;
Aufinger, Klaus ;
Schaefer, Herbert ;
Boeck, Josef ;
Boguth, Sabine ;
Lachner, Rudolf .
2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2010, :29-32
[6]  
Laskin E, 2006, IEEE BIPOL BICMOS, P235
[7]   Device Architectures for High-speed SiGe HBTs [J].
Ruecker, H. ;
Heinemann, B. .
2019 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS 2019), 2019,
[8]  
Trotta S., 2009, Proceedings 2009 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2009), P47, DOI 10.1109/RFIC.2009.5135487
[9]   A Highly-Efficient 120 GHz and 240 GHz Signal Source in A SiGe-Technology [J].
Vogelsang, Florian ;
Starke, David ;
Wittemeier, Jonathan ;
Ruecker, Holger ;
Pohl, Nils .
2020 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2020,
[10]  
Zhou PG, 2019, CHINA COMMUN, V16, P85, DOI 10.12676/j.cc.2019.02.006