Fabrication and characterization of an induced GaAs single hole transistor

被引：22

作者：

Klochan, O. ^{[1
]}

Chen, J. C. H. ^{[1
]}

Micolich, A. P. ^{[1
]}

Hamilton, A. R. ^{[1
]}

Muraki, K. ^{[2
]}

Hirayama, Y. ^{[3
]}

机构：

[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] NTT Corp, NTT Basic Res Lab, Kanagawa 2430198, Japan

[3] Tohoku Univ, Dept Phys, Aoba Ku, Sendai, Miyagi 9808578, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 09期

基金：

澳大利亚研究理事会;

关键词：

aluminium compounds; Coulomb blockade; gallium arsenide; oscillations; semiconductor doping; semiconductor quantum dots; single electron transistors; QUANTUM-DOT; ELECTRON-SPIN; SEMICONDUCTOR;

D O I：

10.1063/1.3336011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and an order of magnitude better than in silicon SETs.

引用

页数：3

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