Fabrication and characterization of an induced GaAs single hole transistor

被引：22

作者：

Klochan, O. ^{[1
]}

Chen, J. C. H. ^{[1
]}

Micolich, A. P. ^{[1
]}

Hamilton, A. R. ^{[1
]}

Muraki, K. ^{[2
]}

Hirayama, Y. ^{[3
]}

机构：

[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] NTT Corp, NTT Basic Res Lab, Kanagawa 2430198, Japan

[3] Tohoku Univ, Dept Phys, Aoba Ku, Sendai, Miyagi 9808578, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 09期

基金：

澳大利亚研究理事会;

关键词：

aluminium compounds; Coulomb blockade; gallium arsenide; oscillations; semiconductor doping; semiconductor quantum dots; single electron transistors; QUANTUM-DOT; ELECTRON-SPIN; SEMICONDUCTOR;

D O I：

10.1063/1.3336011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and an order of magnitude better than in silicon SETs.

引用

页数：3

共 23 条

[1] Chalcogenide passivation of III-V semiconductor surfaces
Bessolov, VN
Lebedev, MV
[J]. SEMICONDUCTORS, 1998, 32 (11) : 1141 - 1156
[2] A Coherent Single-Hole Spin in a Semiconductor
Brunner, Daniel
Gerardot, Brian D.
Dalgarno, Paul A.
Wuest, Gunter
Karrai, Khaled
Stoltz, Nick G.
Petroff, Pierre M.
Warburton, Richard J.
[J]. SCIENCE, 2009, 325 (5936) : 70 - 72
[3] InSitu Reduction of Charge Noise in GaAs/AlxGa1-xAs Schottky-Gated Devices
Buizert, Christo
Koppens, Frank H. L.
Pioro-Ladriere, Michel
Tranitz, Hans-Peter
Vink, Ivo T.
Tarucha, Seigo
Wegscheider, Werner
Vandersypen, Lieven M. K.
[J]. PHYSICAL REVIEW LETTERS, 2008, 101 (22)
[4] Electric dipole spin resonance for heavy holes in quantum dots
Bulaev, Denis V.
Loss, Daniel
[J]. PHYSICAL REVIEW LETTERS, 2007, 98 (09)
[5] Fabrication of induced two-dimensional hole systems on (311)A GaAs
Clarke, WR
Micolich, AP
Hamilton, AR
Simmons, MY
Muraki, K
Hirayama, Y
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (02)
[6] Large variations in the hole spin splitting of quantum-wire subband edges
Csontos, Dan
Zulicke, Ulrich
[J]. PHYSICAL REVIEW B, 2007, 76 (07)
[7] Enhanced g factors of a one-dimensional hole gas with quantized conductance
Daneshvar, AJ
Ford, CJB
Hamilton, AR
Simmons, MY
Pepper, M
Ritchie, DA
[J]. PHYSICAL REVIEW B, 1997, 55 (20): : 13409 - 13412
[8] Elzerman JM, 2004, NATURE, V430, P431, DOI 10.1039/nature02693
[9] Quantum point contacts - Pinning down the last spin
Ensslin, Klaus
[J]. NATURE PHYSICS, 2006, 2 (09) : 587 - 588
[10] Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique
Fujisawa, T
Hirayama, Y
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (04) : 543 - 545

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