Structural and optical properties of InAs quantum dots in AlGaAs matrix

被引：8

作者：

Sizov, DS ^{[1
]}

Samsonenko, YB ^{[1
]}

Tsyrlin, GE ^{[1
]}

Polyakov, NK ^{[1
]}

Egorov, VA ^{[1
]}

Tonkikh, AA ^{[1
]}

Zhukov, AE ^{[1
]}

Mikhrin, SS ^{[1
]}

Vasil'ev, AP ^{[1
]}

Musikhin, YG ^{[1
]}

Tsatsul'nikov, AF ^{[1
]}

Ustinov, VM ^{[1
]}

Ledentsov, NN ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1575361

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Structural and optical properties of InAs quantum dots (QDs) grown in a wide-bandgap Al0.3Ga0.7As matrix is studied. It is shown that a high temperature stability of optical properties can be achieved owing to deep localization of carriers in a matrix whose band gap is wider than that in GaAs. Specific features of QD formation were studied for different amounts of deposited InAs. A steady red shift of the QD emission peak as far as similar to1.18 mum with the effective thickness of InAs in Al0.3Ga0.7As increasing was observed at room temperature. This made it possible to achieve a much higher energy of exciton localization than for QDs in a GaAs matrix. To obtain the maximum localization energy, the QD sheet was overgrown with an InGaAs layer. The possibility of reaching the emission wavelength of similar to 1.3 mum is demonstrated. (C) 2003 MAIK "Nauka / Interperiodica".

引用

页码：559 / 563

页数：5

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