Effect of Double-Layered Al2O3 Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

被引：10

作者：

Yoon, Sung-Min ^{[1
]}

Park, Sang-Hee Ko ^{[1
]}

Yang, Shin-Hyuk ^{[1
]}

Byun, Chun-Won ^{[1
]}

Hwang, Chi-Sun ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305700, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 08期

关键词：

aluminium compounds; atomic layer deposition; chemical interdiffusion; II-VI semiconductors; insulating materials; thin film transistors; wide band gap semiconductors; zinc compounds; ELECTRICAL-PROPERTIES; AM-OLEDS; TRANSPARENT; PERFORMANCE; LIGHT; TEMPERATURE; CIRCUIT; TIME; TFTS;

D O I：

10.1149/1.3428745

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

To improve the bias stress stability of ZnO thin film transistors (TFTs), a double-layered Al2O3 gate insulator (GI) prepared by atomic layer deposition was proposed for forming high quality interface and suppressing interdiffusion. The protection layer deposited using water vapor, which also acts as a first GI, plays an important role in improving the bias stability. We obtained excellent characteristics of the ZnO TFT, in which the threshold voltage of 0.65 V and the mobility of 5.87 cm(2) V-1 s(-1) did not show any changes at the stress field of 1.7 MV/cm even after 51,000 s. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3428745] All rights reserved.

引用

页码：H264 / H267

页数：4

共 30 条

[11] Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].

Jeong, Jae Kyeong ;

Yang, Hui Won ;

Jeong, Jong Han ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[12] Surface-induced time-dependent instability of ZnO based thin-film transistors [J].

Kim, Ki-tae ;

Lee, Kimoon ;

Oh, Min Suk ;

Park, C. H. ;

Im, Seongil .

THIN SOLID FILMS, 2009, 517 (23) :6345-6348

[13] Advanced amorphous silicon thin-film transistors for AM-OLEDs: Electrical performance and stability [J].

Kuo, Alex ;

Won, Tae Kyung ;

Kanicki, Jerzy .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (07) :1621-1629

[14]

LEE HN, 2007, SID CAL US, P1826

[15] Current-scaling a-Si:H TFT pixel-electrode circuit for AM-OLEDs:: Electrical properties and stability [J].

Lee, Hojin ;

Lin, Yen-Chung ;

Shieh, Han-Ping D. ;

Kanicki, Jerzy .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) :2403-2410

[16] Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors [J].

Lee, Jeong-Min ;

Cho, In-Tak ;

Lee, Jong-Ho ;

Kwon, Hyuck-In .

APPLIED PHYSICS LETTERS, 2008, 93 (09)

[17] Thermoelectric properties of nanoporous Ge [J].

Lee, Joo-Hyoung ;

Grossman, Jeffrey C. .

APPLIED PHYSICS LETTERS, 2009, 95 (01)

[18] A novel LTPS-TFT pixel circuit compensating for TFT threshold-voltage shift and OLED degradation for AMOLED [J].

Lin, Chih-Lung ;

Chen, Yung-Chih .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (02) :129-131

[19] Gate-bias stress in amorphous oxide semiconductors thin-film transistors [J].

Lopes, M. E. ;

Gomes, H. L. ;

Medeiros, M. C. R. ;

Barquinha, P. ;

Pereira, L. ;

Fortunato, E. ;

Martins, R. ;

Ferreira, I. .

APPLIED PHYSICS LETTERS, 2009, 95 (06)

[20] Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors [J].

Martins, R. ;

Barquinha, P. ;

Ferreira, I. ;

Pereira, L. ;

Goncalves, G. ;

Fortunato, E. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (04)

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