Effect of Double-Layered Al2O3 Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

被引：10

作者：

Yoon, Sung-Min ^{[1
]}

Park, Sang-Hee Ko ^{[1
]}

Yang, Shin-Hyuk ^{[1
]}

Byun, Chun-Won ^{[1
]}

Hwang, Chi-Sun ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305700, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 08期

关键词：

aluminium compounds; atomic layer deposition; chemical interdiffusion; II-VI semiconductors; insulating materials; thin film transistors; wide band gap semiconductors; zinc compounds; ELECTRICAL-PROPERTIES; AM-OLEDS; TRANSPARENT; PERFORMANCE; LIGHT; TEMPERATURE; CIRCUIT; TIME; TFTS;

D O I：

10.1149/1.3428745

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

To improve the bias stress stability of ZnO thin film transistors (TFTs), a double-layered Al2O3 gate insulator (GI) prepared by atomic layer deposition was proposed for forming high quality interface and suppressing interdiffusion. The protection layer deposited using water vapor, which also acts as a first GI, plays an important role in improving the bias stability. We obtained excellent characteristics of the ZnO TFT, in which the threshold voltage of 0.65 V and the mobility of 5.87 cm(2) V-1 s(-1) did not show any changes at the stress field of 1.7 MV/cm even after 51,000 s. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3428745] All rights reserved.

引用

页码：H264 / H267

页数：4

共 30 条

[1] Influence of time, light and temperature on the electrical properties of zinc oxide TFTs [J].

Barquinha, P ;

Fortunato, E ;

Gonçalves, A ;

Pimentel, A ;

Marques, A ;

Pereira, L ;

Martins, R .

SUPERLATTICES AND MICROSTRUCTURES, 2006, 39 (1-4) :319-327

[2] Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics [J].

Barquinha, P. ;

Pereira, L. ;

Goncalves, G. ;

Martins, R. ;

Kuscer, D. ;

Kosec, M. ;

Fortunato, E. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (11) :H824-H831

[3] A comparison of zinc oxide thin-film transistors on silicon oxide and silicon nitride gate dielectrics [J].

Carcia, P. F. ;

McLean, R. S. ;

Reilly, M. H. ;

Crawford, M. K. ;

Blanchard, E. N. ;

Kattamis, A. Z. ;

Wagner, S. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)

[4] ZnO-based low-voltage inverter with quantum-well-structured nanohybrid dielectric [J].

Cha, Sung Hoon ;

Oh, Min Suk ;

Lee, Kwang H. ;

Choi, Jeong-M. ;

Lee, Byoung H. ;

Sung, Myung A. ;

Im, Seongil .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (10) :1145-1147

[5] Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3/HfO2/Al2O3 structure [J].

Chang, Seongpil ;

Song, Yong-Won ;

Lee, Sanggyu ;

Lee, Sang Yeol ;

Ju, Byeong-Kwon .

APPLIED PHYSICS LETTERS, 2008, 92 (19)

[6]

Cho DH, 2009, IEICE T ELECTRON, VE92C, P1340, DOI [10.1587/transele.E92.C.1340, 10.1587/transele.E92.C1340]

[7] A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators [J].

Cross, R. B. M. ;

De Souza, Maria Merlyne ;

Deane, Steve C. ;

Young, Nigel D. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (05) :1109-1115

[8] Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors [J].

Hoshino, Ken ;

Hong, David ;

Chiang, Hai Q. ;

Wager, John F. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (07) :1365-1370

[9] Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress [J].

Jahinuzzaman, SM ;

Sultana, A ;

Sakariya, K ;

Servati, P ;

Nathan, A .

APPLIED PHYSICS LETTERS, 2005, 87 (02)

[10]

Jeong J.K., 2008, SID INT S DIGEST TEC, P1, DOI DOI 10.1109/HICSS.2008.208

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