Characterisation of ultrasonically sprayed InxSy buffer layers for Cu(In,Ga)Se2 solar cells

被引：39
作者：
Ernits, K.
Bremaud, D.
Buecheler, S.
Hibberd, C. J.
Kaelin, M.
Khrypunov, G.
Mueller, U.
Mellikov, E.
Tiwari, A. N.
机构：
[1] ETH, Solid State Phys Lab, Thin Film Phys Grp, CH-8005 Zurich, Switzerland
[2] Tallinn Univ Technol, Dept Mat Sci, Chair Semicond Mat Technol, EE-19086 Tallinn, Estonia
[3] Univ Loughborough, Dept Elect & Elect Engn, CREST, Loughborough LE11 3TU, Leics, England
[4] Natl Tech Univ, UA-61002 Kharkov, Ukraine
[5] EMPA, Lab Nanoscale Mat Sci, CH-8600 Dubendorf, Switzerland
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 15期
关键词：
indium sulphide; In2S3; buffer layer; thin film; solar cells; ultrasonic spray pyrolysis; CIGS;
D O I：
10.1016/j.tsf.2006.12.168
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In order to replace chemical bath deposited (CBD) US buffer layers in Cu(In,Ga)Se-2 (CIGS) solar cells by an alternative material, InxSy thinfilm buffer layers were prepared by ultrasonic spray pyrolysis at various substrate temperatures. X-ray Diffraction measurements confirmed that the films contained primarily the tetragonal In2S3 phase. X-ray Photoelectron Spectroscopy measurements revealed a small concentration of chlorine impurity throughout the InxSy layer. By depositing the indium sulphide layer as buffer layer in the CIGS solar cell configuration, a maximum solar cell efficiency of 8.9% was achieved, whilst the reference cell with CdS/CIGS on a similar absorber exhibited 12.7% efficiency. Additionally, light soaking enhanced the efficiency of InxSy/CIGS cells primarily by improvements in fill factor and open circuit voltage. (C) 2007 Elsevier B.V All rights reserved.
引用
收藏
页码：6051 / 6054
页数：4
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