Total Ionizing Dose Effect on Low On/Off Switching Ratio TiO2 Memristive Memories

被引：5
作者：
Chi, Yaqing [1 ,2 ]
Liu, Rongrong [1 ]
Tang, Zhensen [1 ]
Song, Ruiqiang [1 ]
机构：
[1] Natl Univ Def Technol, Sch Comp, Changsha 410073, Hunan, Peoples R China
[2] Natl Key Lab Sci & Technol Reliabil Phys & Applic, Guangzhou 510610, Guangdong, Peoples R China
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 04期
关键词：
Memristive memory; radiation effects; TiO2; total ionizing dose; RADIATION;
D O I：
10.1109/TNS.2014.2318298
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The total ionizing dose effect is experimentally investigated on the electrical characteristics of low on/off switching ratio TiO2 memristive memories for the first time. The Co-60 gamma-ray irradiation reduces the dispersion of the I-V curves, the resistances and the switch voltages, but the degradations of parameters have no impact on the data storage and reading/writing operations, indicating great stability to the irradiation and potential to the space applications. Furthermore, the low on/off switching ratio devices are ideal samples for the investigations of radiation effect on the memristive devices due to their observable parameter variation post the irradiation exposure.
引用
收藏
页码：1889 / 1893
页数：5
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