Surface kinetics and subplantation phenomena affecting the texture, morphology, stress, and growth evolution of titanium nitride films

被引:131
作者
Patsalas, P [1 ]
Gravalidis, C [1 ]
Logothetidis, S [1 ]
机构
[1] Aristotle Univ Thessaloniki, Dept Phys, Solid State Phys Sect, GR-54124 Thessaloniki, Greece
关键词
D O I
10.1063/1.1811389
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a thorough study of the microstructure, texture, intrinsic stress, surface, and interface morphology of transition metal nitride (mainly TiN but also CrN) films grown on Si by reactive sputter deposition, with emphasis to the mechanisms of adatom migration on the surface and subplantation of energetic species. In order to study the effects of adatom mobility and the subplantation probability we vary the ion energy and growth temperature. For the experimental part of this work we used nondestructive, statistically reliable x-ray techniques (diffraction, reflectivity, scattering). The x-ray results are compared and correlated with supporting data of in situ spectroscopic ellipsometry as well as Monte Carlo simulations of the irradiation effects and surface diffusion of adatoms. We found that the texture and the surface and interface morphology are sensitive to the mechanism of dissipation of the impinging ions. If the energy is enough to overcome the subplantation threshold (similar to50 eV), then the films are highly compressed and exhibit ultrasmooth surfaces and rough interfaces. In this case, the texture of the films is not affected much by the ion energy, since the energy is dissipated in the bulk and contributes less to the surface mobility of adatoms. On the other hand, when the ion energy is below the subplantation threshold the texture of the films strongly depends on the ion energy and flux, the interfaces are atomically sharp and the surface morphology depends on the mobility and surface diffusion length of adatoms. However, in both cases these effects are dominant at the homogeneous growth. At the initial stages of nucleation and island growth the differences in the growth due to irradiation conditions are not pronounced and the thermodynamics of wetting of TiN on Si are prevailing factors. (C) 2004 American Institute of Physics.
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页码:6234 / 6246
页数:13
相关论文
共 69 条
[31]   Time-dependent evolution of thin TiN films prepared by ion beam assisted deposition [J].
Kovac, J ;
Scarel, G ;
Sancrotti, M ;
Beghi, MG ;
Bottani, CE ;
Ossi, PM ;
Calliari, L ;
Bonelli, M ;
Miotello, A .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) :5566-5572
[32]   Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation [J].
Li, TQ ;
Noda, S ;
Komiyama, H ;
Yamamoto, T ;
Ikuhara, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (05) :1717-1723
[33]   Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111) [J].
Li, TQ ;
Noda, S ;
Tsuji, Y ;
Ohsawa, T ;
Komiyama, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (03) :583-588
[34]   SUBPLANTATION MODEL FOR FILM GROWTH FROM HYPERTHERMAL SPECIES - APPLICATION TO DIAMOND [J].
LIFSHITZ, Y ;
KASI, SR ;
RABALAIS, JW .
PHYSICAL REVIEW LETTERS, 1989, 62 (11) :1290-1293
[35]  
Lim G., 1987, Journal of Materials Research, V2, P471, DOI 10.1557/JMR.1987.0471
[36]   Relation between microstructure and stress in titanium nitride films grown by plasma immersion ion implantation [J].
Lim, SHN ;
McCulloch, DG ;
Bilek, MMM ;
McKenzie, DR .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) :4283-4288
[37]   The effect of crystal structure and morphology on the optical properties of chromium nitride thin films [J].
Logothetidis, S ;
Patsalas, P ;
Sarakinos, K ;
Charitidis, C ;
Metaxa, C .
SURFACE & COATINGS TECHNOLOGY, 2004, 180 :637-641
[38]   X-ray diffuse scattering investigation of thin films [J].
Logothetidis, S ;
Panayiotatos, Y ;
Gravalidis, C ;
Patsalas, P ;
Zoy, A .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 102 (1-3) :25-29
[39]   Density-functional study of bulk and surface properties of titanium nitride using different exchange-correlation functionals [J].
Marlo, M ;
Milman, V .
PHYSICAL REVIEW B, 2000, 62 (04) :2899-2907
[40]  
Maxwell G. J., 1904, Philos. Trans. R. Soc. Lond, V203, P385, DOI [DOI 10.1098/RSTA.1904.0024, 10.1098/rsta.1904.0024]