Lineshape analysis of Raman scattering from LO and SO phonons in III-V nanowires

被引：23

作者：

Begum, N. ^{[1
]}

Bhatti, A. S. ^{[1
]}

Jabeen, F. ^{[2
]}

Rubini, S. ^{[2
]}

Martelli, F. ^{[2
,3
]}

机构：

[1] COMSATS Inst Informat Technol, Dept Phys, Ctr Micro & Nano Devices, Islamabad 44000, Punjab, Pakistan

[2] INFM CNR, Lab Nazl TASC, I-34012 Trieste, Italy

[3] CNR, Ist Microelect & Microsistemi, I-00133 Rome, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 11期

关键词：

catalysts; gallium arsenide; III-V semiconductors; indium compounds; manganese; nanowires; phonon spectra; Raman spectra; semiconductor quantum wires; surface phonons; INDIUM-PHOSPHIDE NANOWIRES; OPTOELECTRONIC DEVICES; BUILDING-BLOCKS; GAAS NANOWIRES; GROWTH; CRYSTALS; FILMS; DEFECTS; SILICON;

D O I：

10.1063/1.3267488

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Micro-Raman spectroscopy is employed to study the phonon confinement in Au- and Mn-catalyzed GaAs and InAs nanowires. The phonon confinement model is used to fit the LO phonon peaks, which also takes into account the contribution to the asymmetry of the line shape due to the presence of surface optical (SO) phonons and structural defects. This also allows us to determine the correlation lengths in these wires, that is the average distance between defects and the defect density in these nanowires. Influence of these defects on the SO phonon is also investigated. A good agreement between the experimental results and the calculations for the SO phonon mode by using the dielectric continuum model is also obtained.

引用

页数：5

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