Preparation of PbTiO3 thin films by plasma enhanced MOCVD and the effect of rapid thermal annealing

Dielectric PbTiO3-thin films were prepared on p-Si(100) substrate by plasma enhanced metalorganic chemical vapor deposition using high purity Ti(O-i-C3H7)(4), Pb(tmhd)(2), and oxygen. As-deposited films were post-treated by rapid thermal annealing method, and the effect of annealing was examined under various. conditions. The deposition process was controlled by mixed-control scheme at temperatures lower than 350 degrees C, but controlled by heterogeneous surface reaction at temperatures greater than 350 degrees C. The as-deposited films showed PbO structure at 350-400 degrees C, but (100) and (101) PbTiO3 orientations started to appear at 450 degrees C. The deposition rate was increased with rf power due to the enhanced dissociation of Ti and Pb precursors. It was found that the concentration of oxygen plays an important role in crystallization of PbTiO3 during the rapid thermal annealing. A linear relationship was obtained between the dielectric constant of PbTiO3 films and the annealing temperature. However, the surface roughness and leakage current density increased mainly due to the defects caused by volatilization of lead and the interface layer formed during the high temperature annealing.