Demonstration of an ion-implanted, wavelength-shifted quantum-well laser

被引：19

作者：

Poole, PJ ^{[1
]}

Charbonneau, S ^{[1
]}

Dion, M ^{[1
]}

Aers, GC ^{[1
]}

Buchanan, M ^{[1
]}

Goldberg, RD ^{[1
]}

Mitchell, IV ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,DEPT PHYS,LONDON,ON N6A 3K7,CANADA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 01期

关键词：

D O I：

10.1109/68.475763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technique for fabricating many different wavelength lasers on the same wafer has been developed. High energy ion implantation was used to selectively blue shift the emission wavelength of an InP-based quantum well laser structure. This structure was then processed into fully functional broad-area lasers whose current threshold was unaffected by the implantation process, indicating extremely high material quality after bandgap-shifting. This process has the potential for the integration of not only different wavelength lasers, but also other devices, such as waveguides, detectors, modulators, etc., on a single wafer.

引用

页码：16 / 18

页数：3