Lattice parameter determination of a composition controlled Si1-xGex layer on a Si(001) substrate using convergent-beam electron diffraction

被引：5

作者：

Akaogi, T

Tsuda, K

Terauchi, M

Tanaka, M

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Asahi Kasei Co Ltd, Fuji, Shizuoka 4168501, Japan

来源：

JOURNAL OF ELECTRON MICROSCOPY | 2004年 / 53卷 / 06期

关键词：

lattice parameter determination; convergent-beam electron diffraction; lattice strain; Si1-xGex; Ge concentration; strain relaxation;

D O I：

10.1093/jmicro/dfh091

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The six lattice parameters (a, b, c, alpha, beta and gamma) of Si1-xGex, which was grown epitaxially on a Si (001) substrate with a varying Ge concentration, were determined by convergent-beam electron diffraction (CBED) without any assumption of crystal lattice symmetry. It was revealed that the lattice parameter c of Si1-xGex varies linearly with the Ge concentration and that the lattice symmetry is lowered from cubic to tetragonal, excluding an artifact due to the thinning of the specimen. The effect of strain relaxation that is caused by thinning specimens is discussed. Ge concentrations of examined specimen areas are evaluated using the obtained lattice parameters.

引用

页码：593 / 600

页数：8

共 30 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].