Preferred orientation and ferroelectric properties of lead zirconate titanate thin films

被引：16

作者：

Li, XS

Tanaka, T

Suzuki, Y

机构：

[1] Technol Res Inst Osaka Prefecture, Super Eye Image Sensor Project, Osaka 5941157, Japan

[2] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China

来源：

THIN SOLID FILMS | 2000年 / 375卷 / 1-2期

关键词：

PZT thin film; facing target sputtering; ferroelectric properties; preferred orientation;

D O I：

10.1016/S0040-6090(00)01231-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly (111) oriented perovskite PZT thin films have been prepared by annealing FTS-deposited samples. The effects of the substrate temperature, sputtering power, annealing temperature and heating rate for annealing on the crystalline orientation were investigated. The sample prepared under the optimum condition showed excellent ferroelectric properties with P-r of 45 muC/cm(2) and P-s of 79 muC/cm(2). (C) 2000 Elsevier Science S.A. All rights reserved.

引用

收藏

页码：91 / 94

页数：4

相关论文

共 11 条

[1] In situ growth of highly oriented Pb(Zr0.5Ti0.5)O3 thin films by low-temperature metal-organic chemical vapor deposition [J].

Bai, GR ;

Tsu, IF ;

Wang, A ;

Foster, CM ;

Murray, CE ;

Dravid, VP .

APPLIED PHYSICS LETTERS, 1998, 72 (13) :1572-1574

[2] TEMPERATURE-TIME TEXTURE TRANSITION OF PB(ZR1-XTIX)O-3 THIN-FILMS .2. HEAT-TREATMENT AND COMPOSITIONAL EFFECTS [J].

CHEN, SY ;

CHEN, IW .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (09) :2337-2344

[3] Preparation of c-axis oriented Pb(Zr, Ti)O-3 thin films by RF-magnetron sputtering and their dielectric and piezoelectric properties [J].

Fujii, S ;

Kanno, I ;

Kamada, T ;

Takayama, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B) :6065-6068

[4] HIGHLY C-AXIS-ORIENTED PB(ZR, TI)O3 FILMS PREPARED BY SPUTTERING [J].

FUKAMI, T ;

MINEMURA, I ;

HIROSHIMA, Y ;

OSADA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9B) :2155-2158

[5] Highly c-axis oriented Pb(Zr,Ti)O3 thin films grown on Ir electrode barrier and their electrical properties [J].

Lee, KB ;

Tirumala, S ;

Desu, SB .

APPLIED PHYSICS LETTERS, 1999, 74 (10) :1484-1486

[6] RF AND DC DISCHARGE CHARACTERISTICS FOR OPPOSED-TARGETS SPUTTERING [J].

MATSUOKA, M ;

HOSHI, Y ;

NAOE, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) :2096-2102

[7]

Randall CA, 1998, J AM CERAM SOC, V81, P677, DOI 10.1111/j.1151-2916.1998.tb02389.x

[8] Low temperature fabrication and properties of sol-gel derived (111) oriented Pb(Zr1-xTix)O3 thin films [J].

Song, YJ ;

Zhu, YF ;

Desu, SB .

APPLIED PHYSICS LETTERS, 1998, 72 (21) :2686-2688

[9] Experimental studies and modeling of Pb-Zr-Ti-O film growth in pulsed laser deposition [J].

Tyunina, M ;

Levoska, J ;

Leppavuori, S .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) :5489-5496

[10] THICKNESS-DEPENDENT ELECTRICAL CHARACTERISTICS OF LEAD-ZIRCONATE-TITANATE FILMS [J].

UDAYAKUMAR, KR ;

SCHUELE, PJ ;

CHEN, J ;

KRUPANIDHI, SB ;

CROSS, LE .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (08) :3981-3986