Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4

被引：30

作者：

Meenakshi, S. ^{[1
]}

Vijayakumar, V. ^{[1
]}

Eifler, A.

Hochheimer, H. D. ^{[2
]}

机构：

[1] Bhabha Atom Res Ctr, High Pressure Phys Div, Purnima Labs, Bombay 400085, Maharashtra, India

[2] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2010年 / 71卷 / 05期

关键词：

X-ray diffraction; High Pressure; Semiconductors; Optical materials; X-RAY-DIFFRACTION; SINGLE-CRYSTALS; HYDROSTATIC-PRESSURE; OPTICAL-ABSORPTION; RAMAN-SCATTERING; SEMICONDUCTORS; COMPOUND; CDGA2SE4;

D O I：

10.1016/j.jpcs.2010.02.007

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Results of angle dispersive X-ray diffraction (ADXRD) measurements on the defect chalcopyrites (DCP), HgAl2Se4 and CdAl2S4 up to 22.2 and 34 GPa, respectively, are reported. The ambient tetragonal phase is retained in HgAl2Se4 and CdAl2S4 up to 13 and 9 GPa respectively. The values of the bulk modulus estimated from the Equation of State is 66(1.5) and 44.6(1) GPa for HgAl2Se4 and CdAl2S4 in the chalcopyrite phase. At higher pressure a disordered rock-salt structure and on pressure release a disordered zinc blende structure with broad X-ray diffraction lines are observed as is the case for several defect chalcopyrites. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：832 / 835

页数：4

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