Effects of taping on grinding quality of silicon wafers in backgrinding

被引:3
|
作者
Dong, Zhigang [1 ]
Zhang, Qian [1 ]
Liu, Haijun [2 ]
Kang, Renke [1 ]
Gao, Shang [1 ]
机构
[1] Dalian Univ Technol, Key Lab Precis & Nontradit Machining Technol, Minist Educ, Dalian 116024, Peoples R China
[2] Hefei Univ Technol, CIMS Inst, Sch Mech Engn, Hefei 230009, Peoples R China
基金
中国国家自然科学基金;
关键词
taping; silicon wafer; backgrinding; subsurface damage; surface roughness;
D O I
10.1007/s11465-020-0624-0
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of silicon wafers. Grinding experiments using coarse and fine resinbond diamond grinding wheels were performed on silicon wafers with tapes of different thicknesses to investigate the effects of taping on peak-to-valley (PV), surface roughness, and subsurface damage of silicon wafers after grinding. Results showed that taping in backgrinding could provide effective protection for ground wafers from breakage. However, the PV value, surface roughness, and subsurface damage of silicon wafers with taping deteriorated compared with those without taping although the deterioration extents were very limited. The PV value of silicon wafers with taping decreased with increasing mesh size of the grinding wheel and the final thickness. The surface roughness and subsurface damage of silicon wafers with taping decreased with increasing mesh size of grinding wheel but was not affected by removal thickness. We hope the experimental finding could help fully understand the role of taping in backgrinding.
引用
收藏
页码:559 / 569
页数:11
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