First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells

被引：42

作者：

Balakrishnan, Krishnan ^{[1
]}

Adivarahan, Vinod ^{[2
]}

Fareed, Qhalid ^{[2
]}

Lachab, Mohamed ^{[1
]}

Zhang, Bin ^{[2
]}

Khan, Asif ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Nitek Inc, Irmo, SC 29063 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

GALLIUM NITRIDE;

D O I：

10.1143/JJAP.49.040206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the first demonstration of a semipolar AlGaN based deep ultraviolet (UV) light emitting diode (LED), with a peak emission wavelength of 307 nm. The LED structure was grown on an m-plane sapphire substrate using metal organic chemical vapor deposition (MOCVD). A combination of pulsed MOCVD (PMOCVD) grown AlN and a short period AlN/AlGaN superlattice structure was found to be instrumental in achieving singular semipolar structural phase of (11 (2) over bar2) with a defect density low enough to fabricate the light emitting device. The on-wafer optical output power of the fabricated LED was similar to 20 mu W at a dc pump current of 20 mA. (C) 2010 The Japan Society of Applied Physics

引用

页码：0402061 / 0402063

页数：3

共 20 条

[1] Characterization of planar semipolar gallium nitride films on spinel substrates [J].

Baker, TJ ;

Haskell, BA ;

Wu, F ;

Fini, PT ;

Speck, JS ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (28-32) :L920-L922

[2]

BALAKRISHNAN K, 2009, 8 INT C NITR SEM, P35334

[3]

BALAKRISHNAN K, 2007, 7 INT C NITR SEM, P35334

[4] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[5] Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates [J].

Chen, CQ ;

Adivarahan, V ;

Shatalov, M ;

Gaevski, ME ;

Kuokstis, E ;

Yang, JW ;

Maruska, HP ;

Gong, Z ;

Khan, MA ;

Liu, R ;

Bell, A ;

Ponce, FA .

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07) :2732-2735

[6] Optically pumped lasing at 353 nm using non-polar a-plane AlGaN multiple quantum wells over r-plane sapphire [J].

Chen, CQ ;

Shatalov, M ;

Kuokstis, E ;

Adivarahan, V ;

Gaevski, M ;

Rai, S ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (8B) :L1099-L1102

[7] Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells [J].

Chen, CQ ;

Adivarahan, V ;

Yang, JW ;

Shatalov, M ;

Kuokstis, E ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (9AB) :L1039-L1040

[8] Comparison between Polar (0001) and Semipolar (11(2)over-bar2) Nitride Blue-Green Light-Emitting Diodes Grown on c- and m-Plane Sapphire Substrates [J].

De Mierry, Philippe ;

Guehne, Tobias ;

Nemoz, Maud ;

Chenot, Sebastien ;

Beraudo, Emmanuel ;

Nataf, Gilles .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (03) :031002

[9] 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20(2)over-bar1} Free-Standing GaN Substrates [J].

Enya, Yohei ;

Yoshizumi, Yusuke ;

Kyono, Takashi ;

Akita, Katsushi ;

Ueno, Masaki ;

Adachi, Masahiro ;

Sumitomo, Takamichi ;

Tokuyama, Shinji ;

Ikegami, Takatoshi ;

Katayama, Koji ;

Nakamura, Takao .

APPLIED PHYSICS EXPRESS, 2009, 2 (08)

[10] Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells [J].

Grandjean, N ;

Damilano, B ;

Dalmasso, S ;

Leroux, M ;

Laügt, M ;

Massies, J .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (07) :3714-3720

← 1 2 →