Liquid phase oxidation on GaAs-based materials and the applications

被引：0
|
作者：
Wang, YH [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词：
GaAs; MOSFET; liquid phase oxidation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The properties of the native oxides on GaAs-based materials will be characterized. The n-channel depletion-mode GaAs MOSFETs with the liquid phase oxidized gate will be fabricated and characterized. The primary results show the stability and potential of the liquid phase oxidation method for the applications to GaAs-based devices. In addition, a new planarized shallow trench isolation technique, a simple self-align process and an oxidized AlGaAs gate for GaAs-based device's applications using liquid phase oxidation method will be demonstrated.
引用
收藏
页码：2291 / 2296
页数：6
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