Influence of laser power on the orientation and microstructure of CeO2 films deposited on Hastelloy C276 tapes by laser chemical vapor deposition

被引：15

作者：

Zhao, Pei ^{[1
]}

Ito, Akihiko ^{[1
]}

Tu, Rong ^{[1
]}

Goto, Takashi ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 21期

关键词：

Laser chemical vapor deposition; CeO2; High deposition rate; YBCO COATED CONDUCTORS; THIN-FILMS; SURFACE-MORPHOLOGY; MOCVD TECHNIQUE; BUFFER LAYERS; GROWTH;

D O I：

10.1016/j.apsusc.2010.04.023

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

CeO2 films were prepared on LaMnO3/MgO/Gd2Zr2O7 multi-coated Hastelloy C276 tapes by laser chemical vapor deposition at different laser power (P-L) from 46 to 101 W. Epitaxial (1 0 0) CeO2 films were prepared at P-L = 46-93W (deposition temperature, T-dep = 705-792 K). Epitaxial CeO2 films had rectangular-shaped grains at P-L = 46-77W(T-dep = 705-754 K), while square-shaped grains were obtained at PL = 85-93W(Tdep = 769-792 K). CeO2 films showed a columnar microstructure. Epitaxial (1 0 0) CeO2 films with rectangular grains exhibited full width at half maximum of omega-scan on (2 0 0) reflection and phi-scan on (2 2 0) reflection of 3.4-3.2 degrees and 6.0-7.2 degrees, respectively. The deposition rate of the epitaxial (1 0 0) CeO2 films had a maximum of 4.6 mu mh(-1) at P-L = 77W (T-dep = 754 K). (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：6395 / 6398

页数：4

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