Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor

被引:8
作者
Deng, Yafeng [1 ]
Li, Yixiang [2 ]
Wang, Pengfei [2 ]
Wang, Shuang [2 ]
Pan, Xuan [2 ]
Wang, Dong [1 ]
机构
[1] Henan Agr Univ, Mech & Elect Engn Coll, Zhengzhou 450002, Peoples R China
[2] Nanjing Univ, Inst Brain Inspired Intelligence, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
关键词
hexagonal boron nitride; van der Waals heterostructure; memristor; BREAKDOWN; GRAPHENE;
D O I
10.1088/1674-4926/43/5/052003
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
With the atomically sharp interface and stable switching channel, van der Waals (vdW) heterostructure memristors have attracted extensive interests for the application of high-density memory and neuromorphic computing. Here, we demonstrate a new type of vdW heterostructure memristor device by sandwiching a single-crystalline h-BN layer between two thin graphites. In such a device, a stable bipolar resistive switching (RS) behavior has been observed for the first time. We also characterize their switching performance, and observe an on/off ratio of >10 (3) and a minimum RESET voltage variation coefficient of 3.81%. Our work underscores the potential of 2D materials and vdW heterostructures for emerging memory and neuromorphic applications.
引用
收藏
页数:5
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