Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy

被引：0
|
作者：
Denisov, S. A. [1 ]
Svetlov, S. P. [1 ]
Chalkov, V. Yu. [1 ]
Shengurov, V. G. [1 ]
Pavlov, D. A. [1 ]
Korotkov, E. V. [1 ]
机构：
[1] NI Lobachevskii State Univ, Res Physicotech Inst, Nizhnii Novgorod 603950, Russia
来源：
INORGANIC MATERIALS | 2007年 / 43卷 / 04期
关键词：
D O I：
10.1134/S0020168507040012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Structurally perfect, single-crystal silicon layers have been grown on (1102) sapphire by sublimation-source molecular beam epitaxy. Electron and x-ray diffraction data demonstrate that silicon-on-sapphire epitaxy occurs at substrate temperatures from 550 to 850 degrees C. As the thickness of the layers decreases from 1.0 to 0.2 mu m, their structural perfection degrades. In the layers grown at 600 degrees C, the density of nucleation sites in the initial stages of growth is similar or equal to 5 x 109 cm(-2).
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页码：331 / 337
页数：7
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